A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN supperlattices

نویسندگان

  • Lingjun Wang
  • Guanghong Wei
چکیده

A planar force-constant model is developed for longitudinal phonons of wurtzite GaN and AlN propagating along the [0001] direction. The proposed model is then applied to the study of the phonon modes in hexagonal (0001)GaN/AlN supperlattices in longitudinal polarization. The confinement of the superlattice phonon modes is discussed. PACS numbers: 68.20.Dj, 68.35.Ja Typeset using REVTEX

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Polar optical phonon states and their dispersive spectra of a wurtzite nitride superlattice with complex bases: transfer-matrix method

Based on the dielectric continuum model and transfer-matrix method, the completing polar optical phonon states in a wurtzite GaN-based superlattice (SLs) with arbitrary-layer complex bases are investigated. It is proved that 2 types of phonon modes probably exist in a wurtzite nitride SL with n-layer complex bases. The analytical phonon states of these modes and their dispersive equations in th...

متن کامل

Strain effects on the interface properties of nitride semiconductors

An ab initio study of nitride-based heteroepitaxial interfaces that uses norm-conserving pseudopotentials and explicitly treats the strain due to lattice mismatch is presented. Strain effects on the band offsets range from 20% to 40%. The AlN/GaN/InN interfaces ~with AlN in-plane lattice constant! are all of type I, while the Al 0.5Ga0.5N/AlN zinc-blende ~001! interface is of type II. Further, ...

متن کامل

Cubic inclusions in hexagonal AlN , GaN , and InN : Electronic states

Modern quasiparticle calculations based on hybrid functionals and the GW approximation or a transition-state approach are used to predict natural band discontinuities between wurtzite and zinc-blende polytypes of AlN, GaN, and InN by two alignment methods, a modified Tersoff method for the branch-point energy and the Shockley-Anderson model aligning electrostatic potentials. We find a type-I he...

متن کامل

Electron–polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that twoto fivefold increase of the room temperature electron mobility can be achieved....

متن کامل

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1~LO! phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008